Datasheet > FTC9012S

FTC9012S

更新时间： 2024-02-09 04:39:08

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
2页	102K
描述
General Purpose Transistors

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中文翻译

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数据手册

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FTC9012S 数据手册

SEMICONDUCTOR

FTC9012S

TECHNICAL DATA

General Purpose Transistors

PNP Silicon

FEATURE

We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION

Device

Package

SOT-23

Shipping

FTC9012SX

SOT– 23

10000/Tape&Reel

SOT-23

COLLECTOR

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

EMITTER

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector current-continuoun

500

mAdc

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R _θJA

P_D

556

Total Device Dissipation

Alumina Substrate, (2) TA=25 ^oC

Derate above 25^oC

300

2.4

mW/^oC

^oC/W

^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

R _θJA

417

Tj ,Tstg

-55 to +150

FTC9012SP=12P FTC9012SQ=12Q FTC9012SR=12R FTC9012SS=12S

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC=1.0mA)

V(BR)CEO

V(BR)EBO

V(BR)CBO

Emitter-Base Breakdown Voltage

(IE=100

Collector-Base Breakdown Voltage

(IC=100 A)

Collector Cutoff Current (VCB=35V)

Emitter Cutoff Current (VBE=4V)

ICBO

IEBO

150

2011. 06. 03

Revision No : 1

1/2

中文翻译

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