Datasheet > FTC5658Q

FTC5658Q

更新时间： 2024-09-24 02:52:07

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FS		/
页数	文件大小	规格书
5页	498K
描述
NPN Silicon General Purpose Amplifier Transistor

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FTC5658Q 数据手册

SEMICONDUCTOR

FTC5658

TECHNICAL DATA

NPN Silicon General

Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT- 723 package which is

designed for low power surface mount applications, where board

space is at a premium.

SOT–723

Features

• Reduces Board Space

• High hFE, 210−460 (typical)

COLLECTOR

• Low V

< 0.5 V

CE(sat)

ESD Performance: Human Body Model;

•

> 2000 V,

Machine Model; > 200 V

BASE

EMITTER

MARKING

DIAGRAM

MAXIMUM RATINGS (TA = 25℃)

SOT−723

Rating

Symbol

Value

Unit

Vdc

Collector- Base Voltage

Collector- Emitter Voltage

Emitter- Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

Vdc

XX = Specific Device Code

BQ = FTC5658Q

BR = FTC5658R

5.0

100

Vdc

Collector Current−Continuous

mAdc

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Rating

Symbol

Max

260

Unit

°C

Power Dissipation (Note 1)

Junction Temperature

Storage Temperature Range

Device

Package

Shipping

8000/Tape & Reel

150

SOT−723

FTC5658

stg

−55 ~ +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR- 4 glasspeoxy printed circuit board using the

minimum recommended footprint.

2018. 08. 29

Revision No : 1

1/5

12 3 4 5

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