SEMICONDUCTOR
FTC4378
TECHNICAL DATA
A
H
C
G
FTC4378
TRANSISTOR (NPN)
FEATURES
D
D
K
High voltage
F
F
DIM MILLIMETERS
4.70 MAX
A
_
+
B
C
D
E
F
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1
2
3
_
+
1.50 0.10
Symbol
VCBO
Parameter
Value
Unit
G
H
J
0.40 TYP
1.7 MAX
1. BASE
2. COLLECTOR
3. EMITTER
0.7 MIN
80
V
Collector-Base Voltage
K
0.5+0.15/-0.10
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
60
5
V
V
SOT-89
1
A
PC
0.5
W
℃
℃
TJ
Junction Temperature
Storage Temperature
150
-55~150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
80
60
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
V
V
V
ICBO
IEBO
VCB=50V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=4V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=2V,IC=0.05A
VCE=2V,IC=1A
100
30
320
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA
VCB=10V,IE=0,f=1MHz
0.5
1.2
V
V
150
12
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
Y
100-200
TY
GR
160-320
TGR
Range
Marking
2013.04. 26
Revision No : 0
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