Datasheet > FTC4378Y

FTC4378Y

更新时间： 2024-02-28 05:21:50

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	171K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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FTC4378Y 数据手册

SEMICONDUCTOR

FTC4378

TECHNICAL DATA

FTC4378

TRANSISTOR (NPN)

FEATURES

High voltage

DIM MILLIMETERS

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

1.50 0.10

Symbol

V_CBO

Parameter

Value

Unit

0.40 TYP

1.7 MAX

1. BASE

2. COLLECTOR

3. EMITTER

0.7 MIN

Collector-Base Voltage

0.5+0.15/-0.10

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

SOT-89

P_C

0.5

℃

T_J

Junction Temperature

Storage Temperature

150

-55~150

T_stg

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

V_CB=50V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=4V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=2V,I_C=0.05A

V_CE=2V,I_C=1A

100

320

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=500mA,I_B=50mA

V_CE=10V,I_C=50mA

V_CB=10V,I_E=0,f=1MHz

0.5

1.2

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

160-320

TGR

Range

Marking

2013.04. 26

Revision No : 0

1/3

12 3

中文翻译

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