Datasheet > FTC4377C

FTC4377C

更新时间： 2024-02-09 18:23:24

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
2页	376K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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FTC4377C 数据手册

SEMICONDUCTOR

FTC4377

TECHNICAL DATA

FTC4377 TRANSISTOR (NPN)

FEATURES

Low voltage

Low Vce(sat) : 0.5V Max (Ic=2A, IB=0.05A)

DIM MILLIMETERS

4.70 MAX

MAXIMUM RATINGS (T_a=25℃unless otherwise noted)

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1.50 0.10

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.40 TYP

1.7 MAX

1. BASE

2. COLLECTOR

3. EMITTER

0.7 MIN

0.5+0.15/-0.10

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

SOT-89

P_C

0.5

℃

T_J

150

-55~150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

V_CB=30V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=6V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V,I_C=0.5A

V_CE=1V,I_C=2A

140

600

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

I_C=2A,I_B=50mA

V_CE=1V,I_C=2A

0.5

1.5

Transition frequency

f_T

V_CE=1V,I_C=0.5A

V_CB=10V,I_E=0,f=1MHz

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

140-240

200-330

300-450

420-600

2012.03.26

Revision No : 0

1/2

中文翻译

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