Datasheet > FTC4373

FTC4373

更新时间： 2022-06-24 15:42:04

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
1页	105K
描述
NPN Transistor

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FTC4373 数据手册

SEMICONDUCTOR

FTC4373

TECHNICAL DATA

NPN Transistor

FEATURES

Small Flat Package

DIM MILLIMETERS

High Current Application

High Voltage

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

High Transition Frequency

1.50 0.10

0.40 TYP

1.7 MAX

1. BASE

2. COLLECTOR

3. EMITTER

0.7 MIN

0.5+0.15/-0.10

SOT-89

MAXIMUM RATINGS (T_a=25 unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

120

Collector Current

0.8

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25 unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -1mA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

120

I_C=-10mA,I_B=0

I_E=-1mA,I_C=0

V_CB=-120V,I_E=0

100

240

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

DC current gain

h_FE

V_CE=-5V, I_C=-100mA

I_C=-500mA,I_B=-50mA

V_CE=-5V, I_C=-500mA

V_CB=-10V,I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

C_ob

V^CE=-5V,IC=-0.1A,

f=30MHz

f_T

120

MHz

Transition frequency

CLASSIFICATION OF h_FE

RANK

80–160

120–240

RANGE

MARKING

2011. 08. 11

Revision No : 0

1/1

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