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FSPYC164R4 PDF预览

FSPYC164R4

更新时间： 2024-11-15 20:21:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 100K
描述
Power Field-Effect Transistor, 70A I(D), 150V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-3

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FSPYC164R4 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：DLCC包装说明：CHIP CARRIER, R-CBCC-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.32
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (Abs) (ID)：70 A最大漏极电流 (ID)：70 A
最大漏源导通电阻：0.021 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：208 W最大脉冲漏极电流 (IDM)：200 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FSPYC164R4 数据手册

 浏览型号FSPYC164R4的Datasheet PDF文件第2页浏览型号FSPYC164R4的Datasheet PDF文件第3页浏览型号FSPYC164R4的Datasheet PDF文件第4页浏览型号FSPYC164R4的Datasheet PDF文件第5页浏览型号FSPYC164R4的Datasheet PDF文件第6页浏览型号FSPYC164R4的Datasheet PDF文件第7页 
FSPYC164R, FSPYC164F  
Data Sheet  
June 2001  
File Number 4936  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 70A (Current Limited by Package), 150V, r  
• UIS Rated  
= 0.021Ω  
DS(ON)  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
• Total Dose  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-Rad Specifications to 100 krad (Si)  
- Rated to 300 krad (Si)  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to300K  
RADS while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Fairchild FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
• Dose Rate  
- Typically Survives 3E9 Rad (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 14nA Per-Rad (Si)/s Typically  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37.  
Star*Power Gold FETs have been optimized for SEE and  
Gate Charge providing SEE performance to 80% of the  
rated voltage for an LET of 82 with extremely low gate  
charge characteristics.  
- Maintain Pre-Rad Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
D
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
G
S
Packaging  
SMD2  
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
Formerly available as type TA45215W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering Samples FSPYC164D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPYC164R3  
FSPYC164R4  
FSPYC164F3  
FSPYC164F4  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPYC164R, FSPYC164F Rev. A2  
1234567...9

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