Datasheet > FSPYC260R

FSPYC260R

更新时间： 2024-09-27 22:09:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	86K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSPYC260R 数据手册

FSPYC260R, FSPYC260F

Data Sheet

May 2000

File Number 4850.1

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 58A, 200V, r

• UIS Rated

• Total Dose

= 0.031Ω

DS(ON)

Intersil Star*Power Rad Hard

MOSFETs have been speciﬁcally

developed for high performance

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Rated to 300K RAD (Si)

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADS while maintaining the guaranteed performance for

SEE (Single Event Effects) which the Intersil FS families

have always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Intersil portfolio of Star*Power FETS includes a family of

devices in various voltage, current and package styles. The

Star*Power family consists of Star*Power and Star*Power

Gold products. Star*Power FETS are optimized for total dose

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 17nA Per-RAD (Si)/s Typically

and r

performance while exhibiting SEE capability at

DS(ON)

• Neutron

full rated voltage up to an LET of 37. Star*Power Gold FETS

have been optimized for SEE and Gate Charge providing

SEE performance to 80% of the rated voltage for an LET of

82 with extremely low gate charge characteristics.

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld effect transistor of the vertical DMOS (VDMOS)

structure. It is speciﬁcally designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD2

Reliability screening is available as either, TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45211W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering samples FSPYC260D1

100K

300K

TXV

FSPYC260R3

FSPYC260R4

FSPYC260F3

FSPYC260F4

Space

TXV

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

12 3 4 5 6 7 8

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与FSPYC260R相关器件

型号	品牌	获取价格	描述	数据表
FSPYC260R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC264D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT
FSPYC264F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT
FSPYC264F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT
FSPYC264R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT
FSPYC264R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT
FSPYE130D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT

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