Datasheet > FSPYC164F4

FSPYC164F4

更新时间： 2024-09-27 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	86K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 70A I(D) \| SMT

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数据手册

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FSPYC164F4 数据手册

FSPYC164R, FSPYC164F

Data Sheet

November 2000

File Number 4936

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 70A (Current Limited by Package), 150V, r

= 0.021Ω

DS(ON)

Intersil Star*Power Rad Hard

MOSFETs have been speciﬁcally

developed for high performance

• UIS Rated

• Total Dose

- Meets Pre-Rad Speciﬁcations to 100 krad (Si)

- Rated to 300 krad (Si)

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300 krads

while maintaining the guaranteed performance for Single

Event Effects (SEE) which the Intersil FS families have

always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 Rad (Si)/s at 80% BV

DSS

The Intersil portfolio of Star*Power FETs includes a family of

devices in various voltage, current and package styles. The

Star*Power family consists of Star*Power and Star*Power

Gold products. Star*Power FETs are optimized for total dose

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 14nA Per-Rad (Si)/s Typically

and r

performance while exhibiting SEE capability at

DS(ON)

• Neutron

full rated voltage up to an LET of 37. Star*Power Gold FETs

have been optimized for SEE and Gate Charge providing

SEE performance to 80% of the rated voltage for an LET of

82 with extremely low gate charge characteristics.

- Maintain Pre-Rad Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld effect transistor of the vertical DMOS (VDMOS)

structure. It is speciﬁcally designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD2

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45215W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPYC164D1

100K

300K

TXV

Space

TXV

FSPYC164R3

FSPYC164R4

FSPYC164F3

FSPYC164F4

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

12 3 4 5 6 7 8

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与FSPYC164F4相关器件

型号	品牌	获取价格	描述	数据表
FSPYC164R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 70A I(D) \| SMT
FSPYC164R4	FAIRCHILD	获取价格	Power Field-Effect Transistor, 70A I(D), 150V, 0.021ohm, 1-Element, N-Channel, Silicon, Me
FSPYC260D1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260F	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260F3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260F4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260R	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC260R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYC264D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT

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