型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS224 | LITTELFUSE |
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工作原理 Upon application of input voltage, the T | |
FS225R12KE3 | INFINEON |
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Technische Information / Technical Information | |
FS225R12KE3 | EUPEC |
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IGBT-Modules | |
FS225R12KE3_05 | EUPEC |
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EconoPACK+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode | |
FS225R12KE3BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 325A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-29 | |
FS225R12KE4 | INFINEON |
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EconoPACK B-series module with trench/fieldstop IGBT4 and optimized EmCon diode | |
FS225R12KE4BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-29 | |
FS225R12OE4 | INFINEON |
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暂无描述 | |
FS225R12OE4BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
FS225R12OE4P | INFINEON |
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TIM |