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FS22SM-12A PDF预览

FS22SM-12A

更新时间: 2024-11-10 22:12:39
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管脉冲局域网
页数 文件大小 规格书
4页 74K
描述
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FS22SM-12A 技术参数

生命周期:Transferred零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.37
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W最大脉冲漏极电流 (IDM):66 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS22SM-12A 数据手册

 浏览型号FS22SM-12A的Datasheet PDF文件第2页浏览型号FS22SM-12A的Datasheet PDF文件第3页浏览型号FS22SM-12A的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS22SM-12A  
HIGH-SPEED SWITCHING USE  
FS22SM-12A  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9MAX.  
1.5  
f 3.2  
2
4.4  
1.0  
5.45  
5.45  
0.6  
2.8  
4
➁ ➃  
GATE  
DRAIN  
SOURCE  
DRAIN  
10V DRIVE  
VDSS ................................................................................600V  
rDS (ON) (MAX) .............................................................. 0.30  
ID ......................................................................................... 22A  
TO-3P  
APPLICATION  
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
600  
30  
V
22  
A
IDM  
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
66  
A
IDA  
22  
A
L = 200µH  
PD  
200  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
4.8  
Tstg  
Typical value  
Sep. 2001  

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