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FRE160H

更新时间： 2024-09-08 22:32:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
6页 52K
描述
41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs

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FRE160H 数据手册

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FRE160D, FRE160R,  
FRE160H  
41A, 100V, 0.050 Ohm, Rad Hard,  
N-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 41A, 100V, RDS(on) = 0.050Ω  
TO-258AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(Si)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 10nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 3E13 Neutrons/cm  
2
- Usable to 3E14 Neutrons/cm  
Description  
Symbol  
The Intersil has designed a series of SECOND GENERATION hardened power  
MOSFETs of both N and P channel enhancement types with ratings from 100V to  
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is  
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from  
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA  
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.  
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown above.  
Reliability screening is available as either non TX (commercial), TX equivalent of  
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired  
deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
FRE160D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
100  
100  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
41  
26  
100  
±20  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
150  
60  
1.20  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
100  
41  
100  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3258.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-37  
123456

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与FRE160H相关器件

型号 品牌 获取价格 描述 数据表
FRE160H1 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE160H2 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE160H3 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE160H4 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE160R INTERSIL

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 		41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE160R1 RENESAS

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 		Power Field-Effect Transistor, 41A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Met
FRE160R2 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE160R3 RENESAS

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 		41A, 100V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE260D INTERSIL

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 		31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE260D1 FAIRCHILD

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 		Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met

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