Datasheet > FRE260H

FRE260H

更新时间： 2024-11-01 22:32:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
6页	52K
描述
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

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FRE260H 数据手册

FRE260D, FRE260R,

FRE260H

31A, 200V, 0.080 Ohm, Rad Hard,

N-Channel Power MOSFETs

June 1998

Features

Package

• 31A, 200V, RDS(on) = 0.080Ω

TO-258AA

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 18.0nA Per-RAD(Si)/sec Typically

• Neutron

- Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Description

Symbol

The Intersil has designed a series of SECOND GENERATION hardened power

MOSFETs of both N and P channel enhancement types with ratings from 100V to

500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is

offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from

1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA

DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Speciﬁed

FRE260D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

200

TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

±20

TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

150

1.20

TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

W/ C

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

-55 to +150

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 3259.1

12 3 4 5 6

中文翻译

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与FRE260H相关器件

型号	品牌	获取价格	描述	数据表
FRE260H2	RENESAS	获取价格	31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE260H3	RENESAS	获取价格	31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE260H4	RENESAS	获取价格	31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE260R	INTERSIL	获取价格	31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE260R1	RENESAS	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
FRE260R2	RENESAS	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
FRE260R3	RENESAS	获取价格	Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
FRE260R4	RENESAS	获取价格	31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264D	INTERSIL	获取价格	23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE264D	FAIRCHILD	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Met

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