5秒后页面跳转
捷配首页

Datasheet > FRE460H
FRE460H PDF预览

FRE460H

更新时间： 2024-11-04 22:30:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
6页 51K
描述
12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

FRE460H 数据手册

 浏览型号FRE460H的Datasheet PDF文件第2页浏览型号FRE460H的Datasheet PDF文件第3页浏览型号FRE460H的Datasheet PDF文件第4页浏览型号FRE460H的Datasheet PDF文件第5页浏览型号FRE460H的Datasheet PDF文件第6页 
FRE460D, FRE460R,  
FRE460H  
12A, 500V, 0.410 Ohm, Rad Hard,  
N-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 12A, 500V, RDS(on) = 0.410Ω  
TO-258AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(Si)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 45.0nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 3E12 Neutrons/cm  
2
- Usable to 3E13 Neutrons/cm  
Description  
Symbol  
The Intersil has designed a series of SECOND GENERATION hardened power  
MOSFETs of both N and P channel enhancement types with ratings from 100V to  
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is  
offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from  
2
2
1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose rate hardness  
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-  
rent limiting.  
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown  
above. Reliability screening is available as either non TX (commercial), TX equiv-  
alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any  
desired deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
FRE460D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
500  
500  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
12  
7
36  
±20  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
150  
60  
1.20  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
36  
12  
36  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3261.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19994-1  
123456

中文翻译

下载PDF

与FRE460H相关器件

型号 品牌 获取价格 描述 数据表
FRE460R INTERSIL

获取价格

 		12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE460R1 RENESAS

获取价格

 		12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE5S-72 Series MERITEK

获取价格

 		FRE5S-72 Series | Fusible Wire Wound Resistor Surge Withstanding Type
FRE9160D INTERSIL

获取价格

 		30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9160D1 RENESAS

获取价格

 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9160D2 RENESAS

获取价格

 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9160D3 RENESAS

获取价格

 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9160D4 RENESAS

获取价格

 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9160H INTERSIL

获取价格

 		30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9160H1 RENESAS

获取价格

 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN

与FRE460H相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证