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FRE9260D

更新时间： 2024-10-29 22:24:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 51K
描述
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs

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FRE9260D 数据手册

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FRE9260D, FRE9260R,  
FRE9260H  
19A, -200V, 0.210 Ohm, Rad Hard,  
P-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 19A, -200V, RDS(on) = 0.210Ω  
TO-258AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(SI)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 18.0nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Description  
Symbol  
The Intersil Corporation Sector has designed a series of SECOND GENERATION  
hardened power MOSFETs of both N and P channel enhancement types with rat-  
ings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose  
hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness  
ranging from 1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose  
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and  
2E12 with current limiting.  
2
2
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown  
above. Reliability screening is available as either non TX (commercial), TX equiv-  
alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group  
for any desired deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
FRE9260D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
-200  
-200  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
19  
12  
57  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
±20  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
150  
60  
1.20  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
57  
19  
57  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
File Number 3269.2  
1
123456

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与FRE9260D相关器件

型号 品牌 获取价格 描述 数据表
FRE9260D1 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260D2 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260D3 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260D4 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260H INTERSIL

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 		19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260H1 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260H2 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260H3 RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE9260R INTERSIL

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 		19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260R RENESAS

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 		19A, 200V, 0.21ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA

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