Datasheet > FRE264D

FRE264D

更新时间： 2024-09-13 22:32:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	51K
描述
23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

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FRE264D 数据手册

FRE264D, FRE264R,

FRE264H

23A, 250V, 0.130 Ohm, Rad Hard,

N-Channel Power MOSFETs

June 1998

Features

Package

• 23A, 250V, RDS(on) = 0.130Ω

TO-258AA

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 22.0nA Per-RAD(Si)/sec Typically

• Neutron

- Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Description

Symbol

The Intersil has designed a series of SECOND GENERATION hardened power

MOSFETs of both N and P channel enhancement types with ratings from 100V to

500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is

offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from

1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose rate hardness

(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-

rent limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown

above. Reliability screening is available as either non TX (commercial), TX equiv-

alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any

desired deviations from the data sheet.

Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Speciﬁed

FRE264D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

250

TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

±20

TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

150

1.20

TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

W/ C

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

-55 to +150

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 3260.2

12 3 4 5 6

中文翻译

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与FRE264D相关器件

型号	品牌	获取价格	描述	数据表
FRE264D1	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264D2	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264D3	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264D4	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264H	FAIRCHILD	获取价格	Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
FRE264H	INTERSIL	获取价格	23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE264H1	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264H2	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264H3	RENESAS	获取价格	23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264R	INTERSIL	获取价格	23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

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