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FRE264H

更新时间： 2024-11-01 22:32:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 51K
描述
23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

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FRE264H 数据手册

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FRE264D, FRE264R,  
FRE264H  
23A, 250V, 0.130 Ohm, Rad Hard,  
N-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 23A, 250V, RDS(on) = 0.130Ω  
TO-258AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(Si)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 22.0nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Description  
Symbol  
The Intersil has designed a series of SECOND GENERATION hardened power  
MOSFETs of both N and P channel enhancement types with ratings from 100V to  
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is  
offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from  
2
2
1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose rate hardness  
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-  
rent limiting.  
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown  
above. Reliability screening is available as either non TX (commercial), TX equiv-  
alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any  
desired deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
FRE264D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
250  
250  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
23  
15  
69  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
±20  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
150  
60  
1.20  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
69  
23  
69  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3260.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19994-1  
123456

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与FRE264H相关器件

型号 品牌 获取价格 描述 数据表
FRE264H1 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264H2 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264H3 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264R INTERSIL

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 		23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
FRE264R FAIRCHILD

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 		Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
FRE264R1 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264R2 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE264R3 RENESAS

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 		Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
FRE264R4 RENESAS

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 		23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE460D INTERSIL

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 		12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs

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