是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-258AA | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | RADIATION HARDENED |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 31 A |
最大漏源导通电阻: | 0.08 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-258AA | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 最大脉冲漏极电流 (IDM): | 93 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FRE260R | INTERSIL |
获取价格 |
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRE260R1 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
FRE260R2 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
FRE260R3 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
FRE260R4 | RENESAS |
获取价格 |
31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN | |
FRE264D | INTERSIL |
获取价格 |
23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs | |
FRE264D | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Met | |
FRE264D1 | RENESAS |
获取价格 |
23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN | |
FRE264D2 | RENESAS |
获取价格 |
23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN | |
FRE264D3 | RENESAS |
获取价格 |
23A, 250V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN |