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FRE260D1 PDF预览

FRE260D1

更新时间: 2024-11-02 21:18:35
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网脉冲晶体管
页数 文件大小 规格书
1页 58K
描述
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

FRE260D1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TO-258AA包装说明:TO-258, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.3
其他特性:RADIATION HARDENED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):31 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-258AA
JESD-30 代码:R-MSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:150 W
最大脉冲漏极电流 (IDM):93 A认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

FRE260D1 数据手册

  

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31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
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FRE260H3 RENESAS

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31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN
FRE260H4 RENESAS

获取价格

31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN