Datasheet > FMB150_07

FMB150_07

更新时间： 2024-10-29 10:34:47

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	32K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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FMB150_07 数据手册

FMB150

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI FMB150 is a high power

transistor designed for FM broadcast

system in 88-108 MHz range. It has

diffused ballasting resistor to improve

MTBF and high VSWR capability.

PACKAGE STYLE .500 4L FLG

.112x45°

Ø.125 NOM.

FEATURES:

FULL R

• Class C, CE mode 28 V Operation

• P_G= 9.0 dB at 150 W/108 MHz

• Omnigold™ Metalization System

• High VSWR capability

MINIMUM

inches / mm

MAXIMUM

inches / mm

MAXIMUM RATINGS

DIM

.220 / 5.59

.230 / 5.84

I_C

16 A

55 V

.125 / 3.18

.245 / 6.22

.255 / 6.48

V_CBO

V_EBO

P_DISS

T_J

.720 / 18.28

.7.30 / 18.54

4.0 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

165 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

1.06 °C/W

.980 / 24.89

T_STG

θ_JC

ORDER CODE: ASI10588

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 20 mA

4.0

BV_CEO

BV_EBO

h_FE

_CE= 5.0 V

I_C= 1.0 A

---

V_CB= 28 V

V_CC= 28 V

f = 1.0 MHz

f = 108 MHz

140

C_OB

9.0

P_G

η_C

P_OUT= 150 W

3:1

---

VSWR

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. D

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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