Datasheet > FMB200D84Z

FMB200D84Z

更新时间： 2024-02-03 05:07:54

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	56K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

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FMB200D84Z 数据手册

FMB200

pin #1

SuperSOT -6

Mark: .N2

Dot denotes pin #1

PNP Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

500

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

T_A= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FMB200

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

700

5.6

180

mW/°C

°C/W

R_θJA

1998 Fairchild Semiconductor Corporation

12 3 4 5

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