Datasheet > FMB200D84Z

FMB200D84Z

更新时间： 2024-01-08 14:20:05

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	56K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

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FMB200D84Z 数据手册

PNP Multi-Chip General Purpose Amplifier

(continued)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BV_CBO

Collector-Base Breakdown Voltage

_C= 10 µA, I_B= 0

BV_CEO

Collector-Emitter Breakdown

Voltage*

I_C= 1.0 mA, I_E= 0

BV_EBO

I_CBO

Emitter-Base Breakdown Voltage

6.0

I_E= 10 µA, I_C= 0

V_CB= 50 V, I_E= 0

V_CE= 40 V, I_E= 10

V_EB= 4.0 V, I_C= 0

Collector Cutoff Current

Emitter Cutoff Current

I_CES

I_EBO

ON CHARACTERISTICS

h_FE

DC Current Gain

_C= 100 µA, V_CE= 1.0 V

100

450

350

I_C= 10 mA, V_CE= 1.0 V

I_C= 150 mA, V_CE= 5.0 V*

Collector-Emitter Saturation Voltage I_C= 10 mA, I_B= 1.0 mA

I_C= 200 mA, I_B= 20 mA*

0.2

0.4

0.85

1.0

V_CE(sat)

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 10 mA, I_B= 1.0 mA

I_C= 200 mA, I_B= 20 mA*

SMALL SIGNAL CHARACTERISTICS

f_T

Current Gain - Bandwidth Product

V_CE= 20 V, I_C= 20 mA

V_CB= 10 V, f = 1.0 MHz

300

4.5

2.5

MHz

Output Capacitance

C_obo

Noise Figure

I_C= 100 µA, V_CE= 5.0 V,

R_G= 2.0 kΩ, f = 1.0 kHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Characteristics

Collector-Emitter Saturation

Voltage vs Collector Current

Typical Pulsed Current Gain

vs Collector Current

0.3

0.25

0.2

500

= 5V

β = 10

125 °C

400

300

200

100

0.15

0.1

25 °C

- 40 °C

0.05

125 °C

- 40 °C

0.1

100

300

0.01

0.1

100

I_C- COLLECTOR CURRENT (mA)

I _C- COLLECTOR CURRENT (mA)

123 4 5

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