FMI20N50ES
FUJI POWER MOSFET
3S
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
T-Pack (L)
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
500
500
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±20
A
Pulsed Drain Current
DP
±80
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
20
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
582.5
27
mJ
mJ
kV/µs
A/µs
dV/dt
-di/dt
4.6
Peak Diode Recovery -di/dt
100
Note*5
1.67
270
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to + 150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=500V, VGS=0V
DS=400V, VGS=0V
GS=±30V, VDS=0V
500
V
V
VGS (th)
D
3.7
-
4.2
-
4.7
25
V
V
V
T
ch=25°C
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
-
250
100
0.31
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
0.27
10
2100
250
15
nA
Ω
R
DS (on)
I
I
D
=10A, VGS=10V
=10A, VDS=25V
-
g
fs
D
5
-
S
Ciss
Coss
Crss
td(on)
tr
3150
375
22.5
60
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
40
38
85
17
V
V
cc=300V
GS=10V
Turn-On Time
Turn-Off Time
-
57
I
D
=10A
td(off)
tf
-
127.5
25.5
85.5
31.5
31.5
15
R
GS=15Ω
-
Total Gate Charge
Q
Q
Q
Q
G
-
57
21
21
10
-
Vcc=250V
Gate-Source Charge
GS
GD
SW
-
I
D
=20A
nC
Gate-Drain Charge
-
VGS=10V
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
I
AV
L=1.07mH, Tch=25°C
20
-
-
A
V
VSD
I
F
=20A, VGS=0V, Tch=25°C
0.90
0.5
7.0
1.35
-
trr
-
µs
µC
I
F
=20A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
max.
0.460
75.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=8A, L=16.7mH, Vcc=50V, RG=50Ω.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=4.6kV/μs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph.
F
D
1
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