Datasheet > FMB2222A

FMB2222A

更新时间： 2024-02-03 11:16:37

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
5页	64K
描述
NPN Multi-Chip General Purpose Amplifier

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技术参数
数据手册

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FMB2222A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.53
Base Number Matches：	1

FMB2222A 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

FMB2222A

FFB2222A

MMPQ2222A

pin #1

SuperSOT -6

SC70-6

Mark: .1P

SOIC-16

Mark: .1P

NPN Multi-Chip General Purpose Amplifier

This device is for use as a medium power amplifier and switch requiring collector

currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

500

Collector Current - Continuous

°C

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_A= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FFB2222A

FMB2222A

MMPQ2222A

P_D

R_θJA

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

Effective 4 Die

300

2.4

415

700

5.6

180

1,000

8.0

mW/°C

°C/W

125

240

Each Die

1998 Fairchild Semiconductor Corporation

12 3 4 5

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