FMI16N50ES
FUJI POWER MOSFET
3S
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
T-Pack (L)
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
500
500
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±16
A
Pulsed Drain Current
DP
±64
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
16
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
485
mJ
mJ
kV/µs
A/µs
22.5
4.8
dV/dt
-di/dt
Peak Diode Recovery -di/dt
100
Note*5
2.02
225
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to + 150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=500V, VGS=0V
DS=400V, VGS=0V
GS=±30V, VDS=0V
500
V
V
VGS (th)
D
3.7
4.2
-
4.7
25
V
V
V
T
ch=25°C
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
-
250
100
0.38
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
0.33
11
nA
Ω
R
DS (on)
I
I
D
=8A, VGS=10V
=8A, VDS=25V
-
g
fs
D
5.5
S
Ciss
Coss
Crss
td(on)
tr
-
-
1700
210
13
2550
315
19.5
55.5
45
V
V
DS=25V
GS=0V
Output Capacitance
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
37
30
87
17
V
V
cc=300V
GS=10V
Turn-On Time
Turn-Off Time
-
I
D
=8A
td(off)
tf
-
130.5
25.5
72
R
GS=18Ω
-
Total Gate Charge
Q
Q
Q
Q
G
-
48
17
Vcc=250V
Gate-Source Charge
GS
GD
SW
-
25.5
27
I
D
=16A
nC
Gate-Drain Charge
-
18
7
VGS=10V
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
10.5
-
I
AV
L=1.52mH, Tch=25°C
16
-
-
A
V
VSD
I
F
=16A, VGS=0V, Tch=25°C
0.90
0.46
6.0
1.35
-
trr
-
µs
µC
I
F
=16A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
max.
0.560
75.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=7A, L=18.1mH, Vcc=50V, RG=50Ω.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=4.8kV/μs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph.
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