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FMB1020S62Z PDF预览

FMB1020S62Z

更新时间: 2024-10-29 19:55:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
2页 27K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERSOT-6

FMB1020S62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

FMB1020S62Z 数据手册

 浏览型号FMB1020S62Z的Datasheet PDF文件第2页 
Discrete Power  
&
Signal Technologies  
FMB1020  
Package: SuperSOT-6  
Device Marking: .004  
Note: The " . " (dot) signifies Pin 1  
Transistor 1 is NPN device,  
transistor 2 is PNP device.  
NPN & PNP Complementary Dual Transistor  
SuperSOT-6 Surface Mount Package  
This dual complementary device was designed for use as a general purpose amplifier applications at  
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).  
Absolute Maximum Ratings*  
TA  
= 25°C unless otherwise noted  
Value  
Symbol  
VCEO  
VCBO  
VEBO  
Parameter  
Units  
Collector-Emitter Voltage  
45  
V
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
V
V
6
500  
mA  
°C  
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, TSTG  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics TA  
= 25°C unless otherwise noted  
Symbol  
Characteristics  
Total Device Dissipation, total  
per side  
Thermal Resistance, Junction to Ambient, total  
Max  
Units  
700  
350  
mW  
PD  
180  
°C/W  
RqJA  
ã 1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fmb1020.lwpPr10&68(Y4)  

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