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FMB13N60E PDF预览

FMB13N60E

更新时间： 2024-10-30 15:19:11
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
5页 166K
描述
T-pack

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中文翻译

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FMB13N60E 数据手册

 浏览型号FMB13N60E的Datasheet PDF文件第2页浏览型号FMB13N60E的Datasheet PDF文件第3页浏览型号FMB13N60E的Datasheet PDF文件第4页浏览型号FMB13N60E的Datasheet PDF文件第5页 
FMI13N60E  
FUJI POWER MOSFET  
3
N-CHANNEL SILICON POWER MOSFET  
Super FAP-E series  
Features  
Outline Drawings [mm]  
Equivalent circuit schematic  
Maintains both low power loss and low noise  
Lower RDS(on) characteristic  
T-Pack(L)  
More controllable switching dv/dt by gate resistance  
Smaller VGS ringing waveform during switching  
Narrow band of the gate threshold voltage (3.0±0.5V)  
High avalanche durability  
Drain(D)  
Gate(G)  
Applications  
Source(S)  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Characteristics  
Unit  
V
Remarks  
VDS  
600  
600  
Drain-Source Voltage  
VDSX  
V
VGS = -30V  
Continuous Drain Current  
I
I
D
±13  
A
Pulsed Drain Current  
DP  
±52  
A
Gate-Source Voltage  
VGS  
±30  
V
Repetitive and Non-Repetitive Maximum Avalanche Current  
Non-Repetitive Maximum Avalanche Energy  
Repetitive Maximum Avalanche Energy  
Peak Diode Recovery dV/dt  
I
AR  
13  
A
Note*1  
Note*2  
Note*3  
Note*4  
E
E
AS  
AR  
471.5  
22.5  
5.2  
mJ  
mJ  
kV/µs  
A/µs  
dV/dt  
-di/dt  
Peak Diode Recovery -di/dt  
100  
Note*5  
1.67  
225  
Ta=25°C  
Tc=25°C  
Maximum Power Dissipation  
P
D
W
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
Tstg  
-55 to + 150  
Electrical Characteristics at Tc=25°C (unless otherwise specified)  
Description  
Symbol  
Conditions  
min.  
typ.  
-
max.  
-
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
I
I
D
=250µA, VGS=0V  
=250µA, VDS=VGS  
DS=600V, VGS=0V  
DS=480V, VGS=0V  
GS=±30V, VDS=0V  
600  
V
V
VGS (th)  
D
2.5  
3.0  
-
3.5  
25  
V
V
V
T
ch=25°C  
-
-
Zero Gate Voltage Drain Current  
I
DSS  
µA  
Tch=125°C  
-
250  
100  
0.58  
-
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
GSS  
-
10  
0.50  
15  
2150  
190  
14  
21  
8
nA  
Ω
R
DS (on)  
I
I
D
=6.5A, VGS=10V  
=6.5A, VDS=25V  
-
g
fs  
D
7.5  
-
S
Ciss  
Coss  
Crss  
td(on)  
tr  
3225  
285  
21  
V
V
DS=25V  
GS=0V  
Output Capacitance  
-
pF  
ns  
f=1MHz  
Reverse Transfer Capacitance  
-
-
31.5  
12  
V
V
cc=300V  
GS=10V  
Turn-On Time  
Turn-Off Time  
-
I
D
=6.5A  
td(off)  
tf  
-
100  
15  
60  
17  
18  
-
150  
22.5  
90  
R
GS=10Ω  
-
Total Gate Charge  
Q
Q
Q
G
-
Vcc=300V  
Gate-Source Charge  
Gate-Drain Charge  
GS  
GD  
I
D
=13A  
-
25.5  
27  
nC  
VGS=10V  
-
Avalanche Capability  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
I
AV  
L=2.36mH, Tch=25°C  
13  
-
-
A
V
VSD  
I
I
F
=13A, VGS=0V, Tch=25°C  
=13A, VGS=0V  
0.90  
0.7  
8
1.08  
-
trr  
-
µs  
µC  
F
-di/dt=100A/µs, Tch=25°C  
Qrr  
-
-
Thermal Characteristics  
Description  
Symbol  
Test Conditions  
Channel to case  
min.  
typ.  
max.  
0.560  
75.0  
Unit  
°C/W  
°C/W  
Rth (ch-c)  
Rth (ch-a)  
Thermal resistance  
Channel to ambient  
Note *1 : Tch≤150°C  
Note *2 : Stating Tch=25°C, IAS=6A, L=24.0mH, Vcc=60V, RG=50Ω  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
See to the 'Transient Themal impeadance' graph.  
E
AS limited by maximum channel temperature and avalanche current.  
Note *4 : I  
Note *5 : I  
F
≤-I  
≤-I  
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.  
, dv/dt=5.2kV/µs, Vcc≤BVDSS, Tch≤150°C.  
See to 'Avalanche Energy' graph.  
F
D
1
12345

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