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FM25L04B-GA PDF预览

FM25L04B-GA

更新时间: 2024-02-01 09:33:10
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 412K
描述
4Kb Serial 3V F-RAM Memory

FM25L04B-GA 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.64Is Samacsys:N
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:4096 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:8字数:512 words
字数代码:512工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512X8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

FM25L04B-GA 数据手册

 浏览型号FM25L04B-GA的Datasheet PDF文件第2页浏览型号FM25L04B-GA的Datasheet PDF文件第3页浏览型号FM25L04B-GA的Datasheet PDF文件第4页浏览型号FM25L04B-GA的Datasheet PDF文件第5页浏览型号FM25L04B-GA的Datasheet PDF文件第6页浏览型号FM25L04B-GA的Datasheet PDF文件第7页 
AEC Q100 Grade 1 Compliant  
FM25L04B Automotive Temp.  
4Kb Serial 3V F-RAM Memory  
Features  
Sophisticated Write Protection Scheme  
Hardware Protection  
4K bit Ferroelectric Nonvolatile RAM  
Organized as 512 x 8 bits  
Software Protection  
High Endurance 10 Trillion (1013) Read/Writes  
NoDelay™ Writes  
Low Power Consumption  
Advanced High-Reliability Ferroelectric Process  
Low Voltage Operation 3.0-3.6V  
6 A Standby Current (+85C)  
Fast Serial Peripheral Interface - SPI  
Up to 10 MHz Frequency  
Industry Standard Configuration  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Automotive Temperature -40 C to +125 C  
o
Qualified to AEC Q100 Specification  
8-pin “Green”/RoHS SOIC Package  
Description  
Pin Configuration  
The FM25L04B is a 4-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
2
3
4
8
7
6
5
CS  
SO  
VDD  
HOLD  
SCK  
SI  
WP  
VSS  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
The FM25L04B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after each byte has  
been transferred to the device. The next bus cycle  
may commence without the need for data polling.  
The FM25L04B is capable of supporting 1013  
read/write cycles, or 10 million times more write  
cycles than EEPROM.  
These capabilities make the FM25L04B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of EEPROM can  
cause data loss.  
Ordering Information  
FM25L04B-GA  
“Green”/RoHS 8-pin SOIC,  
Automotive Grade 1  
FM25L04B-GATR “Green”/RoHS 8-pin SOIC,  
Automotive Grade 1,  
Tape & Reel  
The FM25L04B provides substantial benefits to users  
of serial EEPROM as  
a
hardware drop-in  
replacement. The FM25L04B uses the high-speed  
SPI bus, which enhances the high-speed write  
capability  
of  
F-RAM  
technology.  
Device  
specifications are guaranteed over an automotive  
temperature range of -40°C to +125°C.  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document Number: 001-86152 Rev. *A  
Revised May 07, 2013  

FM25L04B-GA 替代型号

型号 品牌 替代类型 描述 数据表
FM25L04B-GATR CYPRESS

完全替代

4Kb Serial 3V F-RAM Memory
FM24CL04B-G CYPRESS

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4Kb Serial 3V F-RAM Memory
FM24C04B-G CYPRESS

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4Kb Serial 5V F-RAM Memory

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