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FM25L16B-G PDF预览

FM25L16B-G

更新时间： 2024-01-22 15:12:52
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管PC
页数 文件大小 规格书
14页 150K
描述
16Kb Serial 3V F-RAM Memory

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FM25L16B-G 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.12Is Samacsys：N
JESD-30 代码：R-PDSO-G8长度：4.9 mm
内存密度：16384 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：8功能数量：1
端子数量：8字数：2048 words
字数代码：2000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
筛选级别：AEC-Q100座面最大高度：1.75 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL宽度：3.9 mm
Base Number Matches：1

FM25L16B-G 数据手册

 浏览型号FM25L16B-G的Datasheet PDF文件第2页浏览型号FM25L16B-G的Datasheet PDF文件第3页浏览型号FM25L16B-G的Datasheet PDF文件第4页浏览型号FM25L16B-G的Datasheet PDF文件第5页浏览型号FM25L16B-G的Datasheet PDF文件第6页浏览型号FM25L16B-G的Datasheet PDF文件第7页 
Preliminary  
FM25L16B  
16Kb Serial 3V F-RAM Memory  
Features  
Sophisticated Write Protection Scheme  
16K bit Ferroelectric Nonvolatile RAM  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 2,048 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
@ +75ºC)  
Low Power Consumption  
•
•
•
Low Voltage Operation 2.7-3.6V  
200 µA Active Current (1 MHz)  
3 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
•
•
•
Up to 20 MHz Frequency  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industry Standard Configuration  
•
•
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC and TDFN Packages  
Description  
Pin Configuration  
The FM25L16B is a 16-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
WP  
4
VSS  
Top View  
The FM25L16B performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after each byte has  
been transferred to the device. The next bus cycle  
may commence without the need for data polling.  
The FM25L16B is capable of supporting 1014  
read/write cycles, or a million times more write  
cycles than EEPROM.  
1
2
3
4
8
7
6
5
VDD  
/CS  
SO  
/HOLD  
SCK  
SI  
/WP  
VSS  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
These capabilities make the FM25L16B ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
The FM25L16B provides substantial benefits to users  
of serial EEPROM as  
a
hardware drop-in  
replacement. The FM25L16B uses the high-speed  
SPI bus, which enhances the high-speed write  
Ordering Information  
FM25L16B-G  
FM25L16B-GTR  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
capability  
of  
F-RAM  
technology.  
Device  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
FM25L16B-DG  
FM25L16B-DGTR  
“Green”/RoHS 8-pin TDFN  
“Green”/RoHS 8-pin TDFN,  
Tape & Reel  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-F-RAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.3  
Mar. 2011  
Page 1 of 14  
1234567...14

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与FM25L16B-G相关器件

型号 品牌 描述 获取价格 数据表
FM25L16B-GA RAMTRON Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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FM25L16B-GATR CYPRESS Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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FM25L16B-GATR RAMTRON 暂无描述

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FM25L16B-GTR RAMTRON 16Kb Serial 3V F-RAM Memory

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FM25L16B-GTR CYPRESS 16Kb Serial 3V F-RAM Memory

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