Pre-Production
FM25L256
256Kb FRAM Serial 3V Memory – Extended Temp.
Features
Write Protection Scheme
256K bit Ferroelectric Nonvolatile RAM
•
Hardware Protection
•
•
•
•
•
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
•
Software Protection
Low Power Consumption
•
•
Low Voltage Operation 3.0V – 3.6V
1 µA (typ) Standby Current
Very Fast Serial Peripheral Interface - SPI
Industry Standard Configurations
•
•
•
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
•
•
•
Extended Temperature -25°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
D
“Green” Packaging Options
E
D
Description
Pin Configuration
S
VDD
The FM25L256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
N
N
1
2
3
8
CS
SO
7
HOLD
G
ME
I
6
5
WP
SCK
B
SI
4
VSS
S
6
M
5
E
2
O
Unlike serial EEPROMs, the FM25L256 performs
write operations at bus speed. No write delays are
L
1
8
7
6
5
VDD
/CS
SO
D
5
C
incurred. Data is written to the memory array
2
/HOLD
SCK
SI
2
immediately after each byte has been transferred to
the device. The next bus cycle mEay commence
without the need for data polling. In addition, the
3
4
/WP
M
VSS
W
F
R
:
product offers virtually unlimited write endurance.
Top View
E
e
FRAM also exhibits much lower power consumption
than EEPROM.
v
iPin Name
/WP
/HOLD
SCK
SI
T
N
Function
t
a
/CS
Chip Select
Write Protect
Hold
These capabilities make the FM25L256 ideal for
O
n
nonvolatile memory applications requiring frequent
r
R
or rapid writes or low power operation. Examples
e
N
t
Serial Clock
Serial Data Input
range from data collection, where the number of
l
O
write cycles may be critical, to demanding industrial
A
SO
VDD
VSS
Serial Data Output
Supply Voltage (3.0 to 3.6V)
Ground
controls where the long write time of EEPROM can
F
cause data loss.
The FM25L256 provides substantial benefits to users
of serial EEPROM as
a
hardware drop-in
Ordering Information
replacement. The FM25L256 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an extended temperature range of
-25°C to +85°C.
FM25L256-S
FM25L256-G
FM25L256-DG
8-pin SOIC
“Green” 8-pin SOIC
“Green” 8-pin TDFN
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 2.3
March 2007
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