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FM25L256-G PDF预览

FM25L256-G

更新时间: 2024-01-17 09:17:11
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路光电二极管
页数 文件大小 规格书
14页 148K
描述
256Kb FRAM Serial 3V Memory - Extended Temp

FM25L256-G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:8Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.88
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE座面最大高度:1.75 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

FM25L256-G 数据手册

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Pre-Production  
FM25L256  
256Kb FRAM Serial 3V Memory – Extended Temp.  
Features  
Write Protection Scheme  
256K bit Ferroelectric Nonvolatile RAM  
Hardware Protection  
Organized as 32,768 x 8 bits  
Unlimited Read/Write Cycles  
10 Year Data Retention  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Software Protection  
Low Power Consumption  
Low Voltage Operation 3.0V – 3.6V  
1 µA (typ) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configurations  
Up to 20 MHz Frequency  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Extended Temperature -25°C to +85°C  
8-pin SOIC and 8-pin TDFN Packages  
D
“Green” Packaging Options  
E
D
Description  
Pin Configuration  
S
VDD  
The FM25L256 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
N
N
1
2
3
8
CS  
SO  
7
HOLD  
G
ME  
I
6
5
WP  
SCK  
B
SI  
4
VSS  
S
6
M
5
E
2
O
Unlike serial EEPROMs, the FM25L256 performs  
write operations at bus speed. No write delays are  
L
1
8
7
6
5
VDD  
/CS  
SO  
D
5
C
incurred. Data is written to the memory array  
2
/HOLD  
SCK  
SI  
2
immediately after each byte has been transferred to  
the device. The next bus cycle mEay commence  
without the need for data polling. In addition, the  
3
4
/WP  
M
VSS  
W
F
R
:
product offers virtually unlimited write endurance.  
Top View  
E
e
FRAM also exhibits much lower power consumption  
than EEPROM.  
v
iPin Name  
/WP  
/HOLD  
SCK  
SI  
T
N
Function  
t
a
/CS  
Chip Select  
Write Protect  
Hold  
These capabilities make the FM25L256 ideal for  
O
n
nonvolatile memory applications requiring frequent  
r
R
or rapid writes or low power operation. Examples  
e
N
t
Serial Clock  
Serial Data Input  
range from data collection, where the number of  
l
O
write cycles may be critical, to demanding industrial  
A
SO  
VDD  
VSS  
Serial Data Output  
Supply Voltage (3.0 to 3.6V)  
Ground  
controls where the long write time of EEPROM can  
F
cause data loss.  
The FM25L256 provides substantial benefits to users  
of serial EEPROM as  
a
hardware drop-in  
Ordering Information  
replacement. The FM25L256 uses the high-speed SPI  
bus, which enhances the high-speed write capability  
of FRAM technology. Device specifications are  
guaranteed over an extended temperature range of  
-25°C to +85°C.  
FM25L256-S  
FM25L256-G  
FM25L256-DG  
8-pin SOIC  
“Green” 8-pin SOIC  
“Green” 8-pin TDFN  
This is a product in the pre-production phase of development. Device  
characterization is complete and Ramtron does not expect to change the  
specifications. Ramtron will issue a Product Change Notice if any  
specification changes are made.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 2.3  
March 2007  
Page 1 of 14  

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