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FLL1500IU-2A

更新时间： 2024-01-18 11:17:11
品牌 Logo 应用领域
富士通 - FUJITSU 局域网放大器晶体管
页数 文件大小 规格书
4页 203K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

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FLL1500IU-2A 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.84外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (ID)：30 AFET 技术：JUNCTION
最高频带：L BANDJESD-30 代码：R-CDFM-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：187.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

FLL1500IU-2A 数据手册

 浏览型号FLL1500IU-2A的Datasheet PDF文件第2页浏览型号FLL1500IU-2A的Datasheet PDF文件第3页浏览型号FLL1500IU-2A的Datasheet PDF文件第4页 
FLL1500IU-2A  
L-Band High Power GaAs FET  
FEATURES  
• Push-Pull Configuration  
• High Power Output: 150W (Typ.)  
• High PAE: 45%.  
• Broad Frequency Range: 2100 to 2200 MHz.  
• Suitable for class AB operation.  
DESCRIPTION  
The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that  
offers ease of matching, greater consistency and a broader bandwidth for high  
power L-band amplifiers. This product is targeted to reduce the size and  
complexity of highly linear, high power base station transmitting amplifiers.  
This new product is uniquely suited for use in W-CDMA base station amplifiers as  
it offers high gain, long term reliability and ease of use.  
APPLICATIONS  
• Solid State Base-Station Power Amplifier.  
• W-CDMA Communication Systems.  
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25¡C)  
Item  
Symbol  
Condition  
Rating  
Unit  
15  
-5  
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
VDS  
VGS  
PT  
V
V
Tc = 25¡C  
187.5  
W
¡C  
¡C  
Tstg  
Tch  
-65 to +175  
+175  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 12 volts.  
DS  
2. The forward and reverse gate currents should not exceed 234 and -86.4 mA respectively with  
gate resistance of 10W.  
3. The operating channel temperature (T ) should not exceed 145¡C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)  
Limits  
Typ.  
Item  
Symbol  
Conditions  
Unit  
Min.  
Max.  
VDS = 5V, VGS = 0V  
VDS = 5V, IDS = 32A  
IDSS  
gm  
A
S
V
Drain Current  
-
-
72  
-
-
Transconductance  
24  
Pinch-Off Voltage  
Vp  
VDS = 5V, IDS = 4.32A  
IGS = -4.32mA  
-1.0  
-5  
-2.0 -3.5  
VGSO  
Pout  
GL  
Gate-Source Breakdown Voltage  
-
-
-
V
dBm  
dB  
Output Power  
Linear Gain  
50.8 51.8  
VDS = 12V  
f = 2.2 GHz  
IDS = 6.0A  
10.0  
11.0  
25  
-
-
-
-
30  
-
A
Drain Current  
IDSR  
Pin = 42.0dBm  
hadd  
45  
%
Power-Added Efficiency  
Thermal Resistance  
CASE STYLE: IU  
Channel to Case  
0.6  
0.8  
¡C/W  
Rth  
Edition 1.3  
July 1999  
1
1234

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