5秒后页面跳转
FJX4009R PDF预览

FJX4009R

更新时间: 2024-11-01 22:31:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 40K
描述
Switching Application

FJX4009R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.55
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

FJX4009R 数据手册

 浏览型号FJX4009R的Datasheet PDF文件第2页浏览型号FJX4009R的Datasheet PDF文件第3页浏览型号FJX4009R的Datasheet PDF文件第4页 
FJX4009R  
Switching Application (Bias Resistor Built In)  
3
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=4.7K)  
Complement to FJX3009R  
2
1
SOT-323  
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
S59  
R
B
PNP Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-100  
200  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I = -1mA, I =0  
-40  
C
B
I
V
= -30V, I =0  
-0.1  
600  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -1mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
= -10V, I = -5mA  
200  
4.7  
MHz  
T
CE  
C
R
3.2  
6.2  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

与FJX4009R相关器件

型号 品牌 获取价格 描述 数据表
FJX4009RTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FJX4010R FAIRCHILD

获取价格

Switching Application
FJX4010RTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FJX4011R FAIRCHILD

获取价格

Switching Application
FJX4011RTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FJX4012R FAIRCHILD

获取价格

Switching Application
FJX4012RTF FAIRCHILD

获取价格

Switching Application (Bias Resistor Built In)
FJX4013R FAIRCHILD

获取价格

Switching Application
FJX4013RTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
FJX4013RTF ROCHESTER

获取价格

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR