5秒后页面跳转
FJX4011RTF PDF预览

FJX4011RTF

更新时间: 2024-01-04 08:01:08
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
3页 30K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

FJX4011RTF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

FJX4011RTF 数据手册

 浏览型号FJX4011RTF的Datasheet PDF文件第2页浏览型号FJX4011RTF的Datasheet PDF文件第3页 
FJX4011R  
Switching Application (Bias Resistor Built In)  
3
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=22K)  
Complement to FJX3011R  
2
1
SOT-323  
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R
S61  
B
PNP Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-100  
200  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I = -1mA, I =0  
-40  
E
B
I
V
= -30V, I =0  
-0.1  
600  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -1mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
= -10V, I = -5mA  
200  
22  
MHz  
T
CE  
C
R
15  
29  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A3, August 2002  

与FJX4011RTF相关器件

型号 品牌 获取价格 描述 数据表
FJX4012R FAIRCHILD

获取价格

Switching Application
FJX4012RTF FAIRCHILD

获取价格

Switching Application (Bias Resistor Built In)
FJX4013R FAIRCHILD

获取价格

Switching Application
FJX4013RTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
FJX4013RTF ROCHESTER

获取价格

100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
FJX4014R FAIRCHILD

获取价格

Switching Application
FJX597J ETC

获取价格

TRANSISTOR | JFET | N-CHANNEL | 100UA I(DSS) | SOT-323
FJX597JA ETC

获取价格

TRANSISTOR | JFET | N-CHANNEL | 100UA I(DSS) | SOT-323
FJX597JB FAIRCHILD

获取价格

Si N-channel Junction FET
FJX597JBTF FAIRCHILD

获取价格

Capacitor Microphone Applications