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FJX597JC PDF预览

FJX597JC

更新时间: 2024-11-23 22:25:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
5页 55K
描述
Si N-channel Junction FET

FJX597JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.77Is Samacsys:N
配置:SINGLE最大漏极电流 (ID):0.001 A
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

FJX597JC 数据手册

 浏览型号FJX597JC的Datasheet PDF文件第2页浏览型号FJX597JC的Datasheet PDF文件第3页浏览型号FJX597JC的Datasheet PDF文件第4页浏览型号FJX597JC的Datasheet PDF文件第5页 
FJX597JB  
Capacitor Microphone Applications  
3
Especially Suited for use in Audio, Telephone Capacitor Microphones  
Excellent Voltage Characteristic  
Excellent Transient Characteristic  
2
1
SOT-323  
Marking: SCB  
1. Drain 2. Source 3. Gate  
Si N-channel Junction FET  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-20  
Units  
V
V
Gate-Drain Voltage  
Gate Current  
GDO  
I
I
10  
mA  
mA  
mW  
°C  
G
Drain Current  
1
D
P
Power Dissipation  
Junction Temperature  
Storage Temperature  
100  
D
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I = -100uA  
-20  
V
V
GDO  
G
V
(off)  
V
=5V, I =1µA  
-0.6  
-1.5  
240  
GS  
DS  
DS  
DS  
DS  
DS  
D
I
V
V
V
V
=5V, V =0  
150  
0.4  
µA  
mS  
pF  
pF  
DSS  
GS  
lY  
l
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0, f=1MHz  
1.2  
3.5  
FS  
GS  
C
C
=5V, V =0, f=1MHz  
GS  
ISS  
Output Capacitance  
=5V, V =0, f=1MHz  
0.65  
RSS  
GS  
©2004 Fairchild Semiconductor Corporation  
Rev. A, October 2004  

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