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FJX4010R PDF预览

FJX4010R

更新时间: 2024-11-01 22:32:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 40K
描述
Switching Application

FJX4010R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.92
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

FJX4010R 数据手册

 浏览型号FJX4010R的Datasheet PDF文件第2页浏览型号FJX4010R的Datasheet PDF文件第3页浏览型号FJX4010R的Datasheet PDF文件第4页 
FJX4010R  
Switching Application (Bias Resistor Built In)  
3
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=10K)  
Complement to FJX3010R  
2
1
SOT-323  
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R
S60  
B
PNP Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-100  
200  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I = -1mA, I =0  
-40  
E
B
I
V
= -30V, I =0  
-0.1  
600  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -1mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
= -10V, I = -5mA  
200  
10  
MHz  
T
CE  
C
R
7
13  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A3, August 2002  

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