Datasheet > FJX3904_07

FJX3904_07

更新时间： 2024-11-02 03:15:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	137K
描述
NPN Epitaxial Silicon Transistor

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FJX3904_07 数据手册

January 2007

FJX3904

NPN Epitaxial Silicon Transistor

•

General Purpose Transistor

SOT-323

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings* T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

°C

P_C

Collector Power Dissipation

Storage Temperature

350

T_STG

-55 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics*

T = 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEX

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Conditions

Min.

Max.

Units

I_C=10µA, I_E=0

I_C=1mA, I_B=0

I_E=10µA, I_C=0

V_CE=30V, V_EB=3V

h_FE

* DC Current Gain

V_CE=1V, I_C=0.1mA

V_CE=1V, I_C=1mA

V_CE=1V, I_C=10mA

V_CE=1V, I_C=50mA

V_CE=1V, I_C=100mA

100

300

V_CE(sat)

V_BE(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.2

0.3

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.65

300

0.85

0.95

C_ob

f_T

Output Capacitance

Current Gain Bandwidth Product

Noise Figure

V_CB=5V, I_E=0, f=1MHz

V_CE=20V, I_C=10mA

MHz

I_C=100µA, V_CE=5V, R_S=1KΩ

f=10Hz to 15.7KHz

t_ON

Turn On Time

Turn Off Time

V_CC=3V, V_BE=0.5V

I_C=10mA, I_B1=1mA

t_OFF

V_CC=3V, I_C=10mA

I_B1=I_B2=1mA

250

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

FJX3904 Rev. B

www.fairchildsemi.com

12 3 4

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