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FJX3904TF PDF预览

FJX3904TF

更新时间: 2024-11-27 03:15:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管光电二极管
页数 文件大小 规格书
4页 137K
描述
NPN Epitaxial Silicon Transistor

FJX3904TF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.61
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

FJX3904TF 数据手册

 浏览型号FJX3904TF的Datasheet PDF文件第2页浏览型号FJX3904TF的Datasheet PDF文件第3页浏览型号FJX3904TF的Datasheet PDF文件第4页 
January 2007  
FJX3904  
NPN Epitaxial Silicon Transistor  
General Purpose Transistor  
3
2
1
SOT-323  
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
VCBO  
Collector-Base Voltage  
60  
40  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
6
V
200  
mA  
mW  
°C  
PC  
Collector Power Dissipation  
Storage Temperature  
350  
TSTG  
-55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics*  
T = 25°C unless otherwise noted  
a
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICEX  
Parameter  
Collector-Base Breakdown Voltage  
* Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Conditions  
Min.  
60  
Max.  
Units  
IC=10µA, IE=0  
V
V
IC=1mA, IB=0  
40  
IE=10µA, IC=0  
VCE=30V, VEB=3V  
6
V
50  
nA  
hFE  
* DC Current Gain  
VCE=1V, IC=0.1mA  
VCE=1V, IC=1mA  
VCE=1V, IC=10mA  
VCE=1V, IC=50mA  
VCE=1V, IC=100mA  
40  
70  
100  
60  
300  
30  
VCE(sat)  
VBE(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
0.2  
0.3  
V
V
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
0.65  
300  
0.85  
0.95  
V
V
Cob  
fT  
Output Capacitance  
Current Gain Bandwidth Product  
Noise Figure  
VCB=5V, IE=0, f=1MHz  
VCE=20V, IC=10mA  
4
pF  
MHz  
dB  
NF  
IC=100µA, VCE=5V, RS=1KΩ  
5
f=10Hz to 15.7KHz  
tON  
Turn On Time  
Turn Off Time  
VCC=3V, VBE=0.5V  
IC=10mA, IB1=1mA  
70  
ns  
ns  
tOFF  
VCC=3V, IC=10mA  
IB1=IB2=1mA  
250  
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
©2007 Fairchild Semiconductor Corporation  
FJX3904 Rev. B  
1
www.fairchildsemi.com  

FJX3904TF 替代型号

型号 品牌 替代类型 描述 数据表
FJX3904TF ONSEMI

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