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FJX4002R PDF预览

FJX4002R

更新时间: 2024-11-01 22:31:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 44K
描述
Switching Application

FJX4002R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.55其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

FJX4002R 数据手册

 浏览型号FJX4002R的Datasheet PDF文件第2页浏览型号FJX4002R的Datasheet PDF文件第3页浏览型号FJX4002R的Datasheet PDF文件第4页 
FJX4002R  
Switching Application (Bias Resistor Built In)  
3
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R =10K, R =10K)  
1
2
Complement to FJX3002R  
2
1
SOT-323  
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R1  
B
S52  
R2  
PNP Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-50  
V
CEO  
EBO  
-10  
V
I
-100  
200  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I = -100µA, I =0  
-50  
C
B
I
V
= -40V, I =0  
-0.1  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -5mA  
30  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -10mA, I = -0.5mA  
V
CE  
C
B
f
V
= -10V, I =-5mA  
200  
5.5  
MHz  
pF  
T
CE  
C
C
V
= -10V, I =0  
E
ob  
CB  
f=1.0MHz  
V (off)  
Input Off Voltage  
Input On Voltage  
Input Resistor  
V
V
= -5V, I = -100µA  
-0.5  
V
V
I
CE  
CE  
C
V (on)  
= -0.3V, I = -10mA  
-3  
13  
1.1  
I
C
R
7
10  
1
KΩ  
1
R /R  
Resistor Ratio  
0.9  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

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