Datasheet > FJX3906TF-NL

FJX3906TF-NL

更新时间： 2024-09-27 19:01:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	41K
描述
Transistor

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中文翻译

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技术参数
数据手册

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FJX3906TF-NL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.1 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

FJX3906TF-NL 数据手册

FJX3906

General Purpose Transistor

SOT-323

PNP Epitaxial Silicon Transistor

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-40

CES

EBO

-5

-200

350

°C

Collector Power Dissipation

Storage Temperature

-55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

-40

-5

Max.

Units

I = -10µA, I =0

CBO

CEO

EBO

I = -1.0mA, I =0

C B

I =10µA, I =0

= -30V, V = -3V

-50

CEX

* DC Current Gain

= -1V, I = -0.1mA

100

= -1V, I = -1mA

= -1V, I = -10mA

= -1V, I = -50mA

300

= -1V, I = -100mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

I = -10mA, I = -1mA

C B

-0.25

-0.4

I = -50mA, I = -5mA

I = -10mA, I = -1mA

C B

-0.65

250

-0.85

-0.95

I = -50mA, I = -5mA

Current Gain Bandwidth Product

Output Capacitance

I = -10mA, V = -20V

C CE

MHz

= -5V, I =0

CB E

4.5

f=1.0MHz

Noise Figure

I = -10µA, V = -5V

R =1KΩ

f=10Hz to 15.7KHz

V = -3V, V = -0.5V

Turn On Time

Turn Off Time

I = -10mA, I = -1mA

= -3V, I = -10mA

CC C

300

OFF

=I =1mA

B1 B2

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Marking

S2A

Rev. A2, August 2002

12 3 4

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