FJE3303H1TU

更新时间： 2024-09-19 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管功率双极晶体管高压局域网
页数	文件大小	规格书
6页	71K
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FJE3303H1TU 数据手册

FJE3303

High Voltage Fast-Switching NPN Power Transistor

•

High Voltage Capability

High Switching Speed

Suitable for Electronic Ballast and Switching Regulator

TO-126

1. Emitter 2.Collector 3.Base

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

700

400

Units

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse) *

Base Current (DC)

1.5

0.75

1.5

Base Current (Pulse) *

Collector Dissipation (T = 25°C)

°C

Junction Temperature

Storage Temperature

150

-65 ~ 150

STG

* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%

FJE3303 Rev. B

www.fairchildsemi.com

12 3 4 5 6

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FJE3303H1TU 替代型号

型号	品牌	替代类型	描述	数据表
KSE13003ASTU	FAIRCHILD	类似代替	暂无描述
FJE3303H2	FAIRCHILD	类似代替	High Voltage Switch Mode Applications

与FJE3303H1TU相关器件

型号	品牌	获取价格	描述	数据表
FJE3303H2	FAIRCHILD	获取价格	High Voltage Switch Mode Applications
FJE3303H2TU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
FJE3303H2TU	ONSEMI	获取价格	NPN硅晶体管的平面硅晶体管
FJE3303O	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
FJE3303R	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
FJE5304D	FAIRCHILD	获取价格	High Voltage High Speed Power Switch Application
FJE5304D	ONSEMI	获取价格	NPN 型三重扩散平面硅晶体管
FJE5304D_05	FAIRCHILD	获取价格	NPN Triple Diffused Planar Silicon Transistor
FJE5304DTU	FAIRCHILD	获取价格	NPN Triple Diffused Planar Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU
FJE5304DTU	ONSEMI	获取价格	NPN 型三重扩散平面硅晶体管