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FJAF4210OTU PDF预览

FJAF4210OTU

更新时间: 2024-11-21 13:07:47
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飞兆/仙童 - FAIRCHILD 放大器功率放大器
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5页 89K
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FJAF4210OTU 数据手册

 浏览型号FJAF4210OTU的Datasheet PDF文件第2页浏览型号FJAF4210OTU的Datasheet PDF文件第3页浏览型号FJAF4210OTU的Datasheet PDF文件第4页浏览型号FJAF4210OTU的Datasheet PDF文件第5页 
FJAF4210  
Audio Power Amplifier  
High Current Capability : I = -10A  
High Power Dissipation  
Wide S.O.A  
C
Complement to FJAF4310  
TO-3PF  
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
-200  
-140  
-6  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Base Current (DC)  
CBO  
V
CEO  
EBO  
V
I
I
-10  
A
C
-1.5  
A
B
P
Collector Dissipation (T =25°C)  
80  
W
C
C
R
Junction to Case  
1.33  
150  
°C/W  
°C  
°C  
θJC  
T
T
Junction Temperature  
Storage Temperature  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
I =-5mA, I =0  
-200  
-140  
-6  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
Collector-Emitter Breakdown Voltage I =-50mA, R =∞  
C BE  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
I =-5mA, I =0  
V
E
C
I
I
V
=-200V, I =0  
-10  
-10  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
V
V
=-6V, I =0  
C
h
* DC Current Gain  
=-4V, I =-3A  
50  
180  
-0.5  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =-5A, I =-0.5A  
V
CE  
C
B
C
V
=-10V, f=1MHz  
400  
30  
pF  
ob  
CB  
CE  
f
Current Gain Bandwidth Product  
V
=-5V, I =-1A  
MHz  
T
C
* Pulse Test : PW=20µs  
h
Classification  
FE  
Classification  
R
O
Y
h
50 ~ 100  
70 ~ 140  
90 ~ 180  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A, November 2002  

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