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FGY75T120SQDN PDF预览

FGY75T120SQDN

更新时间: 2024-09-17 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 553K
描述
IGBT,超场截止 -1200V 75A

FGY75T120SQDN 数据手册

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DATA SHEET  
www.onsemi.com  
Ultra Field Stop IGBT,  
1200 V, 75 A  
C
G
FGY75T120SQDN  
General Description  
E
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Ultra Field Stop Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on-state voltage and minimal switching loss. The IGBT is  
well suited for UPS and solar applications. Incorporated into the  
device is a soft and fast co-packaged free wheeling diode with a low  
forward voltage.  
Features  
G
C
E
Extremely Efficient Trench with Field Stop Technology  
TO2473LD  
CASE 340CD  
Maximum Junction Temperature: T = 175°C  
J
Low Saturation Voltage: V  
= 1.7 V (Typ.) @ I = 75 A  
C
CE(sat)  
100% of the Parts Tested for I (1)  
LM  
Soft Fast Reverse Recovery Diode  
Optimized for High Speed Switching  
RoHS Compliant  
MARKING DIAGRAM  
Applications  
Solar Inverter, UPS  
$Y&Z&3&K  
FGY75T120  
SQDN  
ABSOLUTE MAXIMUM RATINGS  
(T = 25°C unless otherwise stated)  
J
Symbol  
Parameter  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Value  
1200  
20  
Unit  
V
V
CES  
V
GES  
V
&Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Lot Run Traceability Code  
Transient Gate to Emitter Voltage  
30  
V
I
C
Collector Current @ T = 25°C  
150  
75  
A
C
Collector Current @ T = 100°C  
A
FGY75T120SQDN = Specific Device Code  
C
I
(1)  
(2)  
Pulsed Collector Current @ T = 25°C  
300  
300  
150  
75  
A
LM  
C
I
Pulsed Collector Current  
A
CM  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
I
Diode Forward Current @ T = 25°C  
A
F
C
Diode Forward Current @ T = 100°C  
A
C
I
Pulsed Diode Max. Forward Current  
300  
A
FM  
P
D
Maximum Power Dissipation  
W
@ T = 25°C  
790  
395  
C
@ T = 100°C  
C
T
Operating Junction Temperature  
Storage Temperature Range  
55 to +175  
55 to +175  
300  
°C  
°C  
°C  
J
T
stg  
T
Maximum Lead Temp. for soldering  
Purposes, 1/8from case for 5 s  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. V = 800 V, V = 15 V, I = 300 A, R = 68 W, Inductive Load.  
CC  
GE  
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
July, 2022 Rev. 3  
FGY75T120SQDN/D  

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