DATA SHEET
www.onsemi.com
Ultra Field Stop IGBT,
1200 V, 75 A
C
G
FGY75T120SQDN
General Description
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on-state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast co-packaged free wheeling diode with a low
forward voltage.
Features
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C
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• Extremely Efficient Trench with Field Stop Technology
TO−247−3LD
CASE 340CD
• Maximum Junction Temperature: T = 175°C
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• Low Saturation Voltage: V
= 1.7 V (Typ.) @ I = 75 A
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CE(sat)
• 100% of the Parts Tested for I (1)
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• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• RoHS Compliant
MARKING DIAGRAM
Applications
• Solar Inverter, UPS
$Y&Z&3&K
FGY75T120
SQDN
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise stated)
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Symbol
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Value
1200
20
Unit
V
V
CES
V
GES
V
&Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Run Traceability Code
Transient Gate to Emitter Voltage
30
V
I
C
Collector Current @ T = 25°C
150
75
A
C
Collector Current @ T = 100°C
A
FGY75T120SQDN = Specific Device Code
C
I
(1)
(2)
Pulsed Collector Current @ T = 25°C
300
300
150
75
A
LM
C
I
Pulsed Collector Current
A
CM
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
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Diode Forward Current @ T = 25°C
A
F
C
Diode Forward Current @ T = 100°C
A
C
I
Pulsed Diode Max. Forward Current
300
A
FM
P
D
Maximum Power Dissipation
W
@ T = 25°C
790
395
C
@ T = 100°C
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T
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
°C
°C
°C
J
T
stg
T
Maximum Lead Temp. for soldering
Purposes, 1/8″ from case for 5 s
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Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V = 800 V, V = 15 V, I = 300 A, R = 68 W, Inductive Load.
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GE
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2. Repetitive rating: Pulse width limited by max. junction temperature.
© Semiconductor Components Industries, LLC, 2018
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Publication Order Number:
July, 2022 − Rev. 3
FGY75T120SQDN/D