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FGZ40N120WE PDF预览

FGZ40N120WE

更新时间： 2024-09-17 17:01:47
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 733K
描述
Molded Package TO-247-4

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FGZ40N120WE 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGZ40N120WE  
Discrete IGBT (High-Speed W series)  
1200V / 40A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power conditioner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tvj=25°C (unless otherwise specified)  
Equivalent circuit  
Items  
Symbol Characteristics Unit  
Remarks  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Transient Gate-Emitter Voltage  
V
V
CES  
1200  
± 20  
± 30  
65  
40  
160  
160  
60  
40  
V
① Collector  
GES  
V
T
T
T
p
<1μs  
=25ºC  
=100ºC  
I
I
I
-
I
I
I
C@25  
C@100  
CP  
A
A
A
A
A
C
DC Collector Current  
C
④
Gate  
Pulsed Collector Current  
Turn-Off Safe Operating Area  
Note *1  
CE≤650V, Tvj≤175ºC  
V
①
②
F@25  
F@100  
FP  
③
④
② Emitter  
Sub-Emitter  
Diode Forward Current  
③
A
A
TO-247-4-P2  
Diode Pulsed Current  
160  
Note *1  
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
Operating Junction Temperature Tvj  
P
P
tot_IGBT  
tot_FWD  
430  
190  
-40 ~ +175  
-55 ~ +175  
W
W
°C  
°C  
T
T
C
=25°C  
=25°C  
C
Storage Temperature  
T
stg  
Note *1 : Pulse width limited by Tvjmax.  
Electrical characteristics at Tvj= 25°C (unless otherwise specified) Static Characteristics  
Description  
Symbol  
Conditions  
min.  
-
-
-
typ.  
-
-
max.  
250  
Unit  
µA  
mA  
nA  
V
T
T
vj=25°C  
vj=175°C  
Zero Gate Voltage Collector Current  
I
CES  
V
CE = 1200V, VGE = 0V  
2
200  
7.0  
2.6  
-
-
-
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
CE = 0V, VGE = ±20V  
-
V
V
GE (th)  
CE = 20V, I  
GE = 15V, I  
C
C
= 40mA  
= 40A  
5.0  
6.0  
2.0  
2.6  
2500  
110  
34  
T
T
vj=25°C  
vj=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
CE (sat)  
V
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
oes  
res  
pF  
f=1MHz  
V
CC = 600V  
Gate Charge  
Q
G
I
C
= 40A  
-
120  
-
nC  
V
GE = 15V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30  
16  
150  
50  
1.1  
1.4  
30  
20  
190  
104  
2.5  
-
-
-
-
-
-
-
-
-
-
-
-
T
vj = 25°C, VCC = 600V  
= 40A, VGE = 15V  
= 10Ω  
r
I
C
ns  
mJ  
ns  
d(off)  
f
R
G
Energy loss include “tail” and FWD reverse  
recovery.  
on  
off  
d(on)  
T
vj = 175°C, VCC = 600V  
= 40A, VGE = 15V  
= 10Ω  
r
I
C
d(off)  
f
R
G
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-On Energy  
Turn-Off Energy  
on  
off  
mJ  
2.2  
T
T
vj=25°C  
vj=175°C  
2.40  
2.10  
0.45  
2.20  
0.85  
7.10  
3.36  
V
V
µs  
µC  
µs  
µC  
Forward Voltage Drop  
V
F
I
F
=40A  
-
-
-
-
-
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
t
rr  
V
-di  
V
-di  
CC=600V, I  
F
= 40A  
=40A  
Q
rr  
rr  
F
/dt=600A/µs, Tvj=25°C  
t
rr  
CC=600V, I  
F
Q
F
/dt=600A/µs, Tvj=175°C  
9095a  
MARCH 2017  
1
12345678

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