http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGZ75XS65C
Discrete IGBT (XS-series)
650V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Maximum Ratings and Characteristics
Equivalent circuit
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
① Collector
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Symbol
CES
Value
650
± 20
± 30
115
Unit
V
Remarks
V
V
GES
V
Transient Gate-Emitter Voltage
t < 1 μs
= 25 °C
= 100 °C
Note *1
CE ≤ 650 V
vj ≤ 175 °C
p
I
I
I
C@25
A
A
A
T
T
C
DC Collector Current
C@100
CP
75
300
C
④
Gate
Pulsed Collector Current
Turn-Off Safe Operating Area
V
T
①
②
-
300
A
③
④
② Emiꢀer
③
I
I
I
P
P
F@25
118
75
300
437
327
A
A
A
W
W
°C
°C
Sub-Emiꢀer
Diode Forward Current
F@100
FP
TO-247-4-P2
Diode Pulsed Current
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature Tvj
Storage Temperature
Note *1
= 25 °C
= 25 °C
tot_IGBT
tot_FWD
T
T
C
C
-40 ~ +175
-55 ~ +175
T
stg
Note *1 : Pulse width limited by Tvj max
.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)
Parameter
Symbol Conditions
Zero Gate Voltage
Min.
-
-
Typ.
-
-
Max.
250
2
Unit
μA
mA
T
T
vj = 25 °C
vj = 175 °C
V
V
V
V
V
CE = 650 V
I
CES
Collector Current
GE = 0 V
Gate-Emitter
Leakage Current
Gate-Emitter
CE = 0 V
I
GES
-
-
200
4.6
nA
V
GE = ± 20 V
CE = 20 V
= 75 mA
V
GE(th)
3.4
4.0
Threshold Voltage
IC
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
-
-
-
-
-
-
1.35
1.50
1.60
5940
134
60
1.70
Collector-Emitter
Saturation Voltage
V
GE = 15 V
= 75 A
V
CE(sat)
-
-
-
-
-
V
I
C
Input Capacitance
C
C
C
ies
V
V
CE = 25 V
GE = 0 V
pF
nC
Output Capacitance
Reverse Transfer Capacitance
oes
res
f = 1 MHz
VCC = 520 V
Gate Charge
Q
G
I
C
= 75 A
-
300
-
VGE = 15 V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
21
340
21
0.50
0.74
50
25
380
32
0.80
1.00
1.70
1.78
1.78
88
-
-
-
-
-
-
-
-
-
-
-
-
T
V
vj= 25 °C
r
CC = 400 V
= 37.5 A
GE = 15 V
ns
mJ
ns
d(off)
f
I
C
V
R
G
= 10 Ω
on
off
Energy loss include “tail” and FWD reverse recovery.
t
t
t
t
d(on)
Tvj = 150 °C
r
V
CC = 400 V
= 37.5 A
GE = 15 V
d(off)
f
I
C
V
R
G
= 10 Ω
Turn-On Energy
Turn-Off Energy
E
E
on
off
mJ
Energy loss include “tail” and FWD reverse recovery.
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
2.15
V
V
V
Forward Voltage Drop
V
F
IF
= 75 A
-
-
-
V
CC = 400 V
= 37.5 A
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
ns
I
F
-di /dt = 1500 A/μs
F
Q
rr
-
-
-
2.50
96
-
-
-
µC
ns
Tvj = 25 °C
V
CC = 400 V
= 37.5 A
trr
I
F
-di
F
/dt = 1400 A/μs
Q
rr
3.1
µC
Tvj = 150 °C
9345
OCTOBER 2018
1
5秒后页面跳转
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