http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGZ50N65WD
Discrete IGBT (High-Speed W series)
650V / 50A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
PV Power conditioner
Inverter welding machine
Maximum Ratings and Characteristics
Equivalent circuit
vj
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
Items
Symbol Characteristics Unit
Remarks
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage
V
V
CES
650
±20
±30
70
50
200
200
38
25
V
① Collector
GES
V
T
T
T
p
<1μs
=25ºC
=100ºC
I
I
I
-
I
I
I
C@25
C@100
CP
A
A
A
A
A
A
A
W
W
°C
°C
C
C
DC Collector Current
④
Gate
Pulsed Collector Current
Turn-Off Safe Operating Area
Note *1
CE≤650V, Tvj≤175ºC
V
①
②
F@25
F@100
FP
③
Diode Forward Current
④
② Emitter
Sub-Emitter
③
Diode Pulsed Current
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature Tvj
Storage Temperature
200
330
95
Note *1
T
T
TO-247-4L
P
P
D_IGBT
D_FWD
C
=25°C
=25°C
C
-40 ~ +175
-55 ~ +175
T
stg
Note *1 : Pulse width limited by Tvjmax.
vj
Electrical characteristics at T = 25°C (unless otherwise specified) Static Characteristics
Description
Symbol
Conditions
min.
-
-
-
typ.
-
-
max.
250
2
200
5.0
2.20
-
-
-
-
-
Unit
uA
mA
nA
V
T
T
vj=25°C
vj=175°C
Zero Gate Voltage Collector Current
I
CES
V
CE = 650V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
I
GES
V
V
CE = 0V, VGE = ±20V
-
V
V
GE (th)
CE = 20V, I
GE = 15V, I
C
C
= 50mA
= 50A
3.0
4.0
1.80
2.05
2.10
3650
105
80
T
T
T
vj=25°C
vj=125°C
vj=175°C
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
CE (sat)
V
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE=25V
GE=0V
oes
res
pF
nC
f=1MHz
V
CC = 520V
Gate Charge
Q
G
I
C
= 50A
-
215
-
V
GE = 15V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
26
12
350
26
0.12
0.40
26
14
380
15
0.22
0.52
2.5
1.9
1.7
70
-
-
-
-
-
-
-
-
-
T
vj = 25°C, VCC = 400V
r
I
C
= 25A, VGE = 15V
G(on) = 10Ω, RG(off) = 20Ω
ns
mJ
ns
d(off)
f
R
Energy loss include “tail” and FWD reverse
recovery.
on
off
d(on)
T
vj = 150°C, VCC = 400V
r
I
C
= 25A, VGE = 15V
G(on) = 10Ω, RG(off) = 20Ω
d(off)
f
R
-
-
-
Energy loss include “tail” and FWD reverse
recovery.
Turn-On Energy
Turn-Off Energy
on
off
mJ
T
T
T
vj=25°C
vj=125°C
vj=175°C
3.2
-
-
-
-
V
V
V
ns
µC
ns
µC
Forward Voltage Drop
V
F
I
F
=25A
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
V
-di
V
-di
CC=400V, I
F
= 25A
=25A
Q
rr
rr
F
/dt=500A/µs, Tvj=25°C
0.32
95
0.88
t
rr
CC=400V, I
F
-
-
Q
F
/dt=500A/µs, Tvj=150°C
9070
MARCH 2017
1
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