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FGY75T120SWD PDF预览

FGY75T120SWD

更新时间: 2024-11-10 11:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 284K
描述
1200V 75A 场截止型VII分立式IGBT,Power TO247-3L封装

FGY75T120SWD 数据手册

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DATA SHEET  
www.onsemi.com  
IGBT – Power, Co-PAK  
N-Channel, Field Stop VII (FS7),  
Non SCR, Power TO247-3L,  
1200ꢀV, 1.7ꢀV, 75ꢀA  
BV  
V
I
CES  
CE(SAT)  
C
1200 V  
1.7 V  
75.0 A  
PIN CONNECTIONS  
FGY75T120SWD  
C
Description  
th  
Using the novel field stop 7 generation IGBT technology and the  
G
Gen7 Diode in TO247 3lead package, FGY75T120SWD offers the  
optimum performance with low switching and conduction losses for  
highefficiency operations in various applications like Solar, UPS and  
ESS.  
E
Features  
Maximum Junction Temperature T = 175°C  
J
Positive Temperature Coefficient for Easy Parallel Operation  
High Current Capability  
G
C
E
Smooth and Optimized Switching  
Low Switching Loss  
TO2473LD  
CASE 340CD  
RoHS Compliant  
MARKING DIAGRAM  
Applications  
Boost and Inverter in Solar System  
UPS  
Energy Storage System  
$Y&Z&3&K  
FGY75T  
120SWD  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Symbol  
Value  
1200  
20  
Unit  
V
CES  
V
GES  
V
Transient Gate to Emitter Voltage  
30  
Collector Current  
Power Dissipation  
T
T
T
T
T
= 25°C  
= 100°C  
= 25°C  
= 100°C  
= 25°C,  
I
150  
75  
C
C
C
C
C
C
$Y  
&Z  
&3  
&K  
= onsemi Logo  
= Assembly Plant Code  
= 3Digit Date Code  
A
P
503  
251  
300  
W
D
= 2Digit Lot Traceability Code  
FGY75T120SWD = Specific Device code  
Pulsed Collector  
Current  
I
A
CM  
t = 10 s  
p
ORDERING INFORMATION  
(Note 1)  
Diode Forward  
Current  
T
T
T
= 25°C  
= 100°C  
= 25°C,  
I
150  
75  
C
C
C
F
Device  
Package  
Shipping  
FGY75T120SWD  
TO2473LD  
(PbFree)  
30 Units /  
Tube  
Pulsed Diode  
Maximum Forward  
Current  
I
300  
FM  
t = 10 s  
p
(Note 1)  
Operating Junction and Storage  
Temperature  
T , T  
55 to 175  
°C  
J
STG  
Lead Temperature for Soldering Purposes  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulse width limited by max. Junction temperature.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
March, 2023 Rev. 3  
FGY75T120SWD/D  
 

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