Datasheet > FGY120T65SPD-F085

FGY120T65SPD-F085

更新时间： 2024-11-07 11:11:55

品牌	Logo	应用领域
安森美 - ONSEMI		快速恢复二极管双极性晶体管
页数	文件大小	规格书
11页	475K
描述
IGBT，650V，120A 场截止，带软快速恢复二极管的沟槽

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FGY120T65SPD-F085 数据手册

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Field Stop Trench IGBT With

Soft Fast Recovery Diode

650 V, 120 A

FGY120T65SPD-F085

Features

www.onsemi.com

• Very Low Saturation Voltage : V

= 1.5 V(Typ.) @ I = 120 A

CE(sat)

• Maximum Junction Temperature : T = 175 C

• Positive Temperature Co−efficient

• Tight Parameter Distribution

• High Input Impedance

• 100% of the Parts are Dynamically Tested

• Short Circuit Ruggedness > 6 ms @ 25 C

• Copacked with Soft, Fast Recovery Extremefast Diode

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

Benefits

• Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

• Rugged Transient Reliability

• Outstanding Parallel Operation Performance with Balance Current

TO−247−3LD

CASE 340CU

Sharing

• Low EMI

MARKING DIAGRAM

Applications

• Traction Inverter for HEV/EV

• Auxiliary DC/AC Converter

• Motor Drives

$Y&Z&3&K

FGY120T

65SPD

• Other Power−train Applications Requiring High Power Switch

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FGY120T65SPD= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FGY120T65SPD−F085/D

March, 2020 − Rev. 3

12 3 4 5 6 7...11

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