Datasheet > FGY4L140T120SWD

FGY4L140T120SWD

更新时间： 2024-04-09 19:00:55

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	337K
描述
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FGY4L140T120SWD 数据手册

DATA SHEET

www.onsemi.com

IGBT – Power, Co-PAK

N-Channel, Field Stop VII

CES

CE(SAT)_TYP

1200 V

1.7 V

140 A

(FS7), TO247-4L

1200 V, 1.7 V, 140 A

PIN CONNECTIONS

FGY4L140T120SWD

Description

Using the novel field stop 7th generation IGBT technology and the

Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers

the optimum performance with low switching and conduction losses

for high−efficiency operations in various applications like Solar

Inverter, UPS and ESS.

Features

• Maximum Junction Temperature T = 175°C

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• Smooth and Optimized Switching

• Low Switching Loss

TO−247−4LD

CASE 340BW

• RoHS Compliant

Applications

MARKING DIAGRAM

• Solar Inverter

• UPS

• Energy Storage System

AYWWZZ

Y4L140

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Collector−to−Emitter Voltage

Gate−to−Emitter Voltage

Symbol

Value

1200

Unit

120SWD

Transient Gate−to−Emitter Voltage

= 25°C (Note 1)

= 100°C

200

140

1250

625

560

Collector Current

= 25°C

Power Dissipation

YWW

= Assembly Location

= Date code (Year & week)

= Assembly Lot

= 100°C

Pulsed Collector

Current

= 25°C,

t = 10 ms (Note 2)

Y4L140120SWD = Specific Device Code

= 25°C (Note 1)

= 100°C

200

140

560

Diode Forward

Current

ORDERING INFORMATION

Pulsed Diode Forward

Current

= 25°C,

t = 10 ms (Note 2)

Device

Package

Shipping

FGY4L140T120SWD TO−247−4LD

(Pb−Free)

30 Units /

Tube

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Lead Temperature for Soldering Purposes

265

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limited by bond wire

2. Repetitive rating: Pulse width limited by max. junction temperature.

Publication Order Number:

March, 2024 − Rev. 2

FGY4L140T120SWD/D

12 3 4 5 6 7...9

下载PDF

与FGY4L140T120SWD相关器件

型号	品牌	描述	获取价格	数据表
FGY4L160T120SWD	ONSEMI	IGBT – Power, Co-PAK N-Channel, Field Stop VI	获取价格
FGY4L75T120SWD	ONSEMI	IGBT – Power, Co-PAK N-Channel, Field Stop VI	获取价格
FGY60T120SQDN	ONSEMI	IGBT，超场截止 -1200V 60A	获取价格
FGY60T120SWD	ONSEMI	1200V, 60A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging	获取价格
FGY75N60SMD	FAIRCHILD	600V, 75A Field Stop IGBT	获取价格
FGY75N60SMD	ONSEMI	600V，75A，场截止IGBT	获取价格