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FGP5N60LS PDF预览

FGP5N60LS

更新时间: 2024-11-02 11:11:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网通用开关瞄准线双极性晶体管
页数 文件大小 规格书
10页 395K
描述
IGBT,600V,5A,场截止

FGP5N60LS 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:4 weeks风险等级:0.82
其他特性:LOW CONDUCTION LOSS最大集电极电流 (IC):10 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:4.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:GENERAL PURPOSE SWITCHING
晶体管元件材料:SILICON标称断开时间 (toff):187 ns
标称接通时间 (ton):5.9 nsBase Number Matches:1

FGP5N60LS 数据手册

 浏览型号FGP5N60LS的Datasheet PDF文件第2页浏览型号FGP5N60LS的Datasheet PDF文件第3页浏览型号FGP5N60LS的Datasheet PDF文件第4页浏览型号FGP5N60LS的Datasheet PDF文件第5页浏览型号FGP5N60LS的Datasheet PDF文件第6页浏览型号FGP5N60LS的Datasheet PDF文件第7页 
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